1/8 preliminary data march 2004 stp100nf04 stb100nf04-1 n-channel 40v - 0.0043 ? - 120a to-220/i 2 pak stripfet? ii power mosfet (#) current limited by package (1) i sd 120a, di/dt 300 a/ s, v dd v (br)dss ,tj t jmax (2) starting t j = 25c, i d = 60a, v dd =30 v typical r ds (on) = 0.0043 ? standard threshold drive 100% avalanche tested description this power mosfet is the latest development of stmicroelectronics unique ?single feature size ?? strip-based process. the resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications high current, high switching speed motor control, audio amplifiers dc-dc & dc-ac converters solenoid and relay drivers absolute maximum ratings ( ) pulse width limited by safe operating area type v dss r ds(on) i d stp100nf04 stb100nf04-1 40 v 40 v < 0.0046 ? < 0.0046 ? 120 a 120 a symbol parameter value unit v ds drain-source voltage (v gs =0) 40 v v dgr drain-gate voltage (r gs =20k ? ) 40 v v gs gate- source voltage 20 v i d (#) drain current (continuos) at t c =25c 120 a i d drain current (continuos) at t c = 100c 120 a i dm ( ) drain current (pulsed) 480 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c dv/dt (1) peak diode recovery voltage slope 6 v/ns e as single pulse avalanche energy 1.2 j t stg storage temperature ?55to175 c t j max. operating junction temperature i 2 pak (to-262) 1 2 3 1 2 3 to-220 internal schematic diagram
stp100nf04/stb100nf04-1 2/8 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 40 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds =maxrating,t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs =20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 24v r ds(on) static drain-source on resistance v gs =10v,i d =50a 0.0043 0.0046 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v;i d = 50 a 150 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 5100 pf c oss output capacitance 1300 pf c rss reverse transfer capacitance 160 pf
3/8 stp100nf04/stb100nf04-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =20v,i d =60a r g =4.7 ? v gs =10v (see test circuit, figure 3) 35 ns t r rise time 220 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =32v,i d = 120a, v gs =10v 108 33.5 68 151 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =20v,i d =60a, r g =4.7 ?, v gs = 10v (see test circuit, figure 3) 80 50 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 120 a i sdm (2) source-drain current (pulsed) 480 a v sd (1) forwardonvoltage i sd = 120a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120a, di/dt = 100a/s, v dd =20v,t j = 150 c (see test circuit, figure 5) 75 185 4.9 ns nc a
stp100nf04/stb100nf04-1 4/8 parameter node value ctherm1 5 - 4 0.011 ctherm2 4 - 3 0.0012 ctherm3 3 - 2 0.05 ctherm4 2 - 1 0.1 rtherm1 5 - 4 0.09 rtherm2 4 - 3 0.02 rtherm3 3 - 2 0.11 rtherm4 2 - 1 0.017 1 spice thermal model
5/8 stp100nf04/stb100nf04-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp100nf04/stb100nf04-1 6/8 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
7/8 stp100nf04/stb100nf04-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stp100nf04/stb100nf04-1 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
|
